Operating Temperature -40°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Element Configuration Single
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 90A
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.7V
Test Condition 400V, 48A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 48A
Current - Collector Pulsed (Icm) 192A
Td (on/off) @ 25°C 70ns/140ns
Switching Energy 1.7mJ (on), 1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7.7V