FF650R17IE4D_B2
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
INFINEON FF650R17IE4D_B2 IGBT Array & Module Transistor, N Channel, 650 A, 2 V, 4.15 kW, 1.7 kV, Module
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status RoHS Compliant
REACH SVHC Unknown
Technical
Turn Off Time-Nom (toff) 1870 ns
Turn On Time 765 ns
Collector Emitter Saturation Voltage 2V
Collector Emitter Breakdown Voltage 1.7kV
Max Collector Current 930A
Collector Emitter Voltage (VCEO) 1.7kV
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Case Connection ISOLATED
Element Configuration Dual
Power Dissipation-Max 4.15kW
Number of Elements 2
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Terminal Finish NOT SPECIFIED
Number of Terminations 10
Pbfree Code no
Physical
Number of Pins 10
Package / Case Module
Mount Screw
Alternative Model
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