Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 268W
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 105 ns
Collector Emitter Voltage (VCEO) 1.85V
Max Collector Current 76A
Reverse Recovery Time 120ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.6V
Test Condition 400V, 35A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 35A
Turn Off Time-Nom (toff) 188 ns
Current - Collector Pulsed (Icm) 105A
Td (on/off) @ 25°C 46ns/105ns
Switching Energy 390μJ (on), 632μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V