IXTH80N65X2
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 80A TO-247
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Buying Options
Total Price: USD $7.53
Unit Price: USD $7.52812
≥1 USD $7.52812
≥10 USD $7.102
≥100 USD $6.7
≥500 USD $6.32075
Inventory: 3030
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 15 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Manufacturer Package Identifier IXTH80N65X2
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 890W Tc
Power Dissipation 890W
Turn On Delay Time 36 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 40m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 7753pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 144nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 650V
Max Junction Temperature (Tj) 150°C
Dimensions
Height 25.66mm
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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