Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 2.47mJ (on), 2.16mJ (off)
Td (on/off) @ 25°C 50ns/200ns
Current - Collector Pulsed (Icm) 225A
Turn Off Time-Nom (toff) 310 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Test Condition 400V, 75A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.7V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 140A
Collector Emitter Voltage (VCEO) 2.1V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 454W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ