NTHD5904NT3G
RoHS
/
Package 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET 20V 4.5A Dual N-Channel
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Current Rating 3.3A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Qualification Status Not Qualified
Number of Elements 2
Power Dissipation-Max 640mW Ta
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.13W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 3.3A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 465pF @ 16V
Current - Continuous Drain (Id) @ 25°C 2.5A Ta
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Rise Time 17ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.065Ohm
Drain to Source Breakdown Voltage 20V
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
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