Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 454W
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 225 ns
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 140A
Reverse Recovery Time 155 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.7V
Test Condition 400V, 75A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Turn Off Time-Nom (toff) 310 ns
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 50ns/200ns
Switching Energy 2.47mJ (on), 2.16mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V