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Infineon Technologies
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 12A 63W TO220A
PDF
/
Buying Options
Total Price: USD $8.96
Unit Price: USD $8.95565
≥1 USD $8.95565
≥10 USD $7.34825
≥100 USD $7.11835
≥500 USD $6.88845
≥1000 USD $6.6595
Inventory: 1162
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No

Dimensions

Width 4.699mm
Length 10.5156mm
Height 15.24mm

Technical

Fall Time-Max (tf) 89ns
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 130μJ (on), 83μJ (off)
Td (on/off) @ 25°C 22ns/100ns
Current - Collector Pulsed (Icm) 24A
Gate Charge 12nC
IGBT Type NPT
Turn Off Time-Nom (toff) 199 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 4A
Test Condition 400V, 4A, 100 Ω, 15V
Turn On Time 40 ns
Collector Emitter Saturation Voltage 2.5V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-220AB
Max Collector Current 12A
Collector Emitter Voltage (VCEO) 2.5V
Polarity/Channel Type N-CHANNEL
Rise Time 18ns
Transistor Application MOTOR CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 63W
Element Configuration Single
Number of Elements 1
Current Rating 12A
Max Power Dissipation 63W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2004
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 11 Weeks

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