IRFP250
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 33A TO-247
PDF
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Buying Options
Total Price: USD $0.75
Unit Price: USD $0.7467
≥1 USD $0.7467
≥10 USD $0.61275
≥100 USD $0.59375
≥500 USD $0.57475
≥1000 USD $0.55575
Inventory: 99770
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status Non-RoHS Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 600 mJ
Pulsed Drain Current-Max (IDM) 132A
Drain to Source Breakdown Voltage 200V
Drain-source On Resistance-Max 0.085Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 33A
Fall Time (Typ) 40 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 50ns
Gate Charge (Qg) (Max) @ Vgs 158nC @ 10V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Input Capacitance (Ciss) (Max) @ Vds 2850pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 85m Ω @ 16A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 25 ns
Power Dissipation 180W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 180W Tc
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number IRFP
Current Rating 33A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 200V
Subcategory FET General Purpose Power
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Series PowerMESH? II
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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