IRG7PH50UPBF
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 140A 556W TO247AC
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 5.31mm
Length 15.87mm
Height 20.7mm
Technical
Fall Time-Max (tf) 65 ns
Gate-Emitter Thr Voltage-Max 6V
Switching Energy 3.6mJ (on), 2.2mJ (off)
Td (on/off) @ 25°C 35ns/430ns
Current - Collector Pulsed (Icm) 150A
Gate Charge 290nC
IGBT Type Trench
Turn Off Time-Nom (toff) 710 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
Test Condition 600V, 50A, 5 Ω, 15V
Turn On Time 75 ns
Collector Emitter Saturation Voltage 1.7V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
JEDEC-95 Code TO-247AC
Max Collector Current 140A
Collector Emitter Voltage (VCEO) 2V
Turn-Off Delay Time 430 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 556W
Turn On Delay Time 35 ns
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Rise Time-Max 60 ns
Number of Elements 1
Max Power Dissipation 556W
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2004
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Weight 38.000013g
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 14 Weeks
Alternative Model
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