Gate-Emitter Thr Voltage-Max 7.5V
Switching Energy 2.3mJ (on), 1.6mJ (off)
Td (on/off) @ 25°C 90ns/340ns
Current - Collector Pulsed (Icm) 160A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 35A
Test Condition 600V, 35A, 5 Ω, 15V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 130 ns
Max Collector Current 90A
Collector Emitter Voltage (VCEO) 2.4V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Max Power Dissipation 400W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~150°C TJ