R6007KNJTL
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CHANNEL 600V 7A TO263
PDF
/
Buying Options
Total Price: USD $1.66
Unit Price: USD $1.6632
≥1 USD $1.6632
≥10 USD $1.37808
≥100 USD $1.097096
≥500 USD $0.928312
Inventory: 90
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 20 Weeks
Physical
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 78W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 620m Ω @ 2.4A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 470pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 7A
Threshold Voltage 5V
Drain Current-Max (Abs) (ID) 7A
Drain-source On Resistance-Max 0.62Ohm
Pulsed Drain Current-Max (IDM) 21A
DS Breakdown Voltage-Min 600V
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You
R6007KNJTL+price,R6007KNJTL+datasheet,R6007KNJTL+in stock,buy+R6007KNJTL,finder+R6007KNJTL,R6007KNJTL+tutorials,R6007KNJTL+download