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IRG7CH37K10EF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package Die
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT CHIP WAFER
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Technical

Gate-Emitter Thr Voltage-Max 7.5V
Gate-Emitter Voltage-Max 30V
Td (on/off) @ 25°C 28ns/122ns
Gate Charge 80nC
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 15A
Test Condition 600V, 15A, 10 Ω, 15V
Current - Collector (Ic) (Max) 15A
Voltage - Collector Emitter Breakdown (Max) 1200V
Polarity/Channel Type N-CHANNEL
Input Type Standard
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2013
Packaging Bulk
Operating Temperature -40°C~175°C TJ

Physical

Package / Case Die
Mounting Type Surface Mount

Supply Chain

Factory Lead Time 16 Weeks

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