IRG7CH37K10EF
RoHS 
RoHS compliant
RoHS compliantPackage Die
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT CHIP WAFER
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 7.5V
Gate-Emitter Voltage-Max 30V
Td (on/off) @ 25°C 28ns/122ns
Gate Charge 80nC
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 15A
Test Condition 600V, 15A, 10 Ω, 15V
Current - Collector (Ic) (Max) 15A
Voltage - Collector Emitter Breakdown (Max) 1200V
Polarity/Channel Type N-CHANNEL
Input Type Standard
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2013
Packaging Bulk
Operating Temperature -40°C~175°C TJ
Physical
Package / Case Die
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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