Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 45W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 66 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Avalanche Energy Rating (Eas) 700 mJ
Max Junction Temperature (Tj) 175°C