Fall Time-Max (tf) 190 ns
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 5.68mJ (on), 3.23mJ (off)
Td (on/off) @ 25°C 67ns/230ns
Current - Collector Pulsed (Icm) 156A
Turn Off Time-Nom (toff) 660 ns
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 42A
Test Condition 800V, 42A, 5 Ω, 15V
Collector Emitter Saturation Voltage 2.97V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 107 ns
Max Collector Current 78A
Collector Emitter Voltage (VCEO) 3.9V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Case Connection COLLECTOR
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 250
Max Power Dissipation 350W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature -55°C~150°C TJ