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IRG4PSH71KDPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-274AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 1200V 78A 350W SUPER247
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Buying Options
Total Price: USD $8.61
Unit Price: USD $8.6064
≥1 USD $8.6064
Inventory: 132
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 5.3mm
Length 16.0782mm
Height 20.8mm

Technical

Fall Time-Max (tf) 190 ns
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 5.68mJ (on), 3.23mJ (off)
Td (on/off) @ 25°C 67ns/230ns
Current - Collector Pulsed (Icm) 156A
Gate Charge 410nC
Turn Off Time-Nom (toff) 660 ns
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 42A
Test Condition 800V, 42A, 5 Ω, 15V
Turn On Time 152 ns
Collector Emitter Saturation Voltage 2.97V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 107 ns
Max Collector Current 78A
Collector Emitter Voltage (VCEO) 3.9V
Polarity/Channel Type N-CHANNEL
Rise Time 84 ns
Transistor Application MOTOR CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 350W
Element Configuration Single
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 78A
Peak Reflow Temperature (Cel) 250
Max Power Dissipation 350W
Voltage - Rated DC 1.2kV
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
ECCN Code EAR99
Termination Through Hole
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
JESD-609 Code e3
Published 1999
Packaging Bulk
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-274AA
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 7 Weeks

Alternative Model

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