Drain to Source Resistance 12mOhm
Input Capacitance 5.878nF
Drain to Source Breakdown Voltage -20V
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 9.2A
Turn-Off Delay Time 210 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 96nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 9.2A Ta
Input Capacitance (Ciss) (Max) @ Vds 5878pF @ 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 12mOhm @ 9.2A, 4.5V
Power Dissipation-Max 1.3W Ta
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ