Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 2.63mJ (on), 1.34mJ (off)
Td (on/off) @ 25°C 71ns/150ns
Current - Collector Pulsed (Icm) 204A
Turn Off Time-Nom (toff) 460 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 28A
Test Condition 720V, 28A, 5 Ω, 15V
Collector Emitter Saturation Voltage 2.25V
Collector Emitter Breakdown Voltage 900V
Reverse Recovery Time 90 ns
Max Collector Current 51A
Collector Emitter Voltage (VCEO) 2.7V
Turn-Off Delay Time 150 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Dual
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature -55°C~150°C TJ