Fall Time-Max (tf) 600 ns
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 720μJ (on), 8.27mJ (off)
Td (on/off) @ 25°C 33ns/650ns
Current - Collector Pulsed (Icm) 140A
Turn Off Time-Nom (toff) 1700 ns
Vce(on) (Max) @ Vge, Ic 1.36V @ 15V, 41A
Test Condition 480V, 41A, 5 Ω, 15V
Collector Emitter Saturation Voltage 1.36V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 70A
Collector Emitter Voltage (VCEO) 1.36V
Turn-Off Delay Time 650 ns
Polarity/Channel Type N-CHANNEL
Case Connection COLLECTOR
Element Configuration Dual
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 250
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature -55°C~150°C TJ