Drain to Source Breakdown Voltage 20V
Drain Current-Max (Abs) (ID) 5.3A
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 7.3A
Turn-Off Delay Time 45 ns
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 5.3A Ta
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 37m Ω @ 1A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Max Power Dissipation 1.47W
Subcategory FET General Purpose Power
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)