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IRG4PC50FD-EPBF

Infineon Technologies
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 70A 200W TO247AD
PDF
/
Buying Options
Total Price: USD $2.25
Unit Price: USD $2.248998
≥1 USD $2.248998
≥200 USD $0.870453
≥400 USD $0.840256
≥800 USD $0.824501
Inventory: 4861
Minimum: 1
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Technical Details

Compliance

RoHS Status RoHS Compliant
Radiation Hardening No

Dimensions

Width 5.3086mm
Length 15.875mm
Height 20.701mm

Technical

Switching Energy 1.5mJ (on), 2.4mJ (off)
Td (on/off) @ 25°C 55ns/240ns
Current - Collector Pulsed (Icm) 280A
Gate Charge 190nC
Turn Off Time-Nom (toff) 660 ns
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 39A
Test Condition 480V, 39A, 5 Ω, 15V
Turn On Time 86 ns
Collector Emitter Saturation Voltage 1.6V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-247AD
Reverse Recovery Time 50 ns
Max Collector Current 70A
Collector Emitter Voltage (VCEO) 1.6V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 200W
Element Configuration Single
Number of Elements 1
Max Power Dissipation 200W
Additional Feature ULTRA FAST SOFT RECOVERY
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Published 2004
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 22 Weeks

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