IRFD224PBF
RoHS 
RoHS compliant
RoHS compliantPackage 4-DIP (0.300, 7.62mm)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 250V 630MA 4-DIP
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Buying Options
Total Price: USD $1.26
Unit Price: USD $1.2584
≥1 USD $1.2584
≥10 USD $1.03224
≥100 USD $0.80256
≥500 USD $0.680293
≥1000 USD $0.554171
≥3000 USD $0.521682
Inventory: 1152
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 1W Ta
Power Dissipation 1W
Turn On Delay Time 7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.1Ohm @ 380mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
Current - Continuous Drain (Id) @ 25°C 630mA Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 630mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 250V
Input Capacitance 260pF
Drain to Source Resistance 1.1Ohm
Rds On Max 1.1 Ω
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
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