Gate-Emitter Thr Voltage-Max 6V
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 10A
Voltage - Collector Emitter Breakdown (Max) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Subcategory Insulated Gate BIP Transistors
Additional Feature FAST SPEED
Terminal Finish Tin/Lead (Sn/Pb)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy