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2731-100M

Microsemi
RoHS
/
Package /
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description Trans GP BJT NPN 65V 15A 3-Pin Case 55KS-1
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Technical Details

Compliance

RoHS Status RoHS Compliant
Radiation Hardening No

Technical

Highest Frequency Band S B
Frequency - Transition 3.1GHz
Gain 9.4 dB
Collector Emitter Breakdown Voltage 65V
Max Collector Current 15A
Collector Emitter Voltage (VCEO) 65V
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Frequency (Max) 3.1GHz
Case Connection BASE
Power Dissipation-Max 575W
Configuration SINGLE
Number of Elements 1
JESD-30 Code R-CDFM-F2
Pin Count 2
Terminal Form FLAT
Terminal Position DUAL
Subcategory Other Transistors
Additional Feature HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS
Min Operating Temperature -65°C
Max Operating Temperature 200°C
Number of Terminations 2
Part Status Active
Published 2004
Packaging Bulk

Physical

Number of Pins 3
Mount Chassis Mount, Screw

Supply Chain

Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time 12 Weeks

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