Fall Time-Max (tf) 110 ns
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 110μJ (on), 230μJ (off)
Td (on/off) @ 25°C 27ns/100ns
Current - Collector Pulsed (Icm) 160A
Turn Off Time-Nom (toff) 174 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Test Condition 480V, 20A, 10 Ω, 15V
Collector Emitter Saturation Voltage 2.5V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 2.5V
Turn-Off Delay Time 100 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 160W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature -55°C~150°C TJ