RDX080N50FU6
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 8A TO-220FM
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Drain to Source Breakdown Voltage 500V
Continuous Drain Current (ID) 8A
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8A Ta
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 25V
Vgs(th) (Max) @ Id 4V @ 1mA
Rds On (Max) @ Id, Vgs 850m Ω @ 4A, 10V
FET Type N-Channel
Power Dissipation 40W
Power Dissipation-Max 40W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Published 2006
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 17 Weeks
Alternative Model
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