IRG4BC20WPBF
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 13A 60W TO220AB
PDF
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Buying Options
Total Price: USD $0.35
Unit Price: USD $0.3458
≥1 USD $0.3458
≥10 USD $0.28405
≥100 USD $0.2755
≥500 USD $0.266
≥1000 USD $0.25745
Inventory: 26005
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.69mm
Length 10.54mm
Height 8.77mm
Technical
Fall Time-Max (tf) 96 ns
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 60μJ (on), 80μJ (off)
Td (on/off) @ 25°C 22ns/110ns
Current - Collector Pulsed (Icm) 52A
Gate Charge 26nC
Turn Off Time-Nom (toff) 300 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 6.5A
Test Condition 480V, 6.5A, 50 Ω, 15V
Turn On Time 36 ns
Collector Emitter Saturation Voltage 2.6V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-220AB
Max Collector Current 13A
Collector Emitter Voltage (VCEO) 2.6V
Turn-Off Delay Time 110 ns
Polarity/Channel Type N-CHANNEL
Rise Time 15 ns
Transistor Application MOTOR CONTROL
Turn On Delay Time 22 ns
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 60W
Element Configuration Dual
Number of Elements 1
Current Rating 13A
Terminal Position SINGLE
Max Power Dissipation 60W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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