IRFD123
RoHS
/
Package 4-DIP (0.300, 7.62mm)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
SMALL SIGNAL N-CHANNEL MOSFET
PDF
/
Buying Options
Total Price: USD $0.77
Unit Price: USD $0.7656
≥1 USD $0.7656
Inventory: 26615
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
DS Breakdown Voltage-Min 80V
Drain-source On Resistance-Max 0.4Ohm
Drain Current-Max (Abs) (ID) 1.1A
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1.3A Ta
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 270m Ω @ 780mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-PDIP-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Terminal Finish TIN LEAD
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Packaging Tube
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case 4-DIP (0.300, 7.62mm)
Mounting Type Through Hole
Alternative Model
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