Gate-Emitter Thr Voltage-Max 5.7V
Gate-Emitter Voltage-Max 20V
Td (on/off) @ 25°C 14ns/146ns
Current - Collector Pulsed (Icm) 12A
Turn Off Time-Nom (toff) 342 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 4A
Test Condition 400V, 4A, 43 Ω, 15V
Power Dissipation-Max (Abs) 75W
Current - Collector (Ic) (Max) 8A
Voltage - Collector Emitter Breakdown (Max) 600V
Reverse Recovery Time 43ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Base Part Number *KD04N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~175°C TJ