Resistor - Emitter Base (R2) 5.1 k Ω
Continuous Collector Current 100mA
Resistor - Base (R1) 510 Ω
Max Breakdown Voltage 50V
Collector Emitter Saturation Voltage 250mV
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 500μA, 10mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5mA 10V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 50V
Transistor Type NPN - Pre-Biased
Transistor Application SWITCHING
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 125mW
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 10
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)