MG200J6ES61
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MOD 600V 200A 1000W
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 40nF @ 10V
NTC Thermistor Yes
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 200A
Input Capacitance 40nF
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 1mA
Max Collector Current 200A
Collector Emitter Voltage (VCEO) 2.4V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Power - Max 1000W
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 6
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X17
Pin Count 17
Reach Compliance Code unknown
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 1kW
ECCN Code EAR99
Number of Terminations 17
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series IGBTMOD?
Published 2012
Operating Temperature -20°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case Module
Mounting Type Chassis Mount
Mount Chassis Mount
Alternative Model
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