Drain to Source Resistance 200mOhm
Drain to Source Breakdown Voltage -150V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 18A
Turn-Off Delay Time 80 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 150V
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 200mOhm @ 9A, 10V
Element Configuration Single
Power Dissipation-Max 204W Tc
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ