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RoHS
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Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 150V 18A TO-3P
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC

Technical

Rds On Max 200 mΩ
Drain to Source Resistance 200mOhm
Input Capacitance 3nF
Drain to Source Breakdown Voltage -150V
Gate to Source Voltage (Vgs) 30V
Threshold Voltage -4V
Continuous Drain Current (ID) 18A
Turn-Off Delay Time 80 ns
Fall Time (Typ) 40 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 150V
Rise Time 40ns
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 200mOhm @ 9A, 10V
FET Type P-Channel
Power Dissipation 204W
Element Configuration Single
Power Dissipation-Max 204W Tc
Current Rating -18A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC -150V
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2001
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Supplier Device Package TO-3P
Number of Pins 3
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Mount Through Hole

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