CM75TJ-24F
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Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MOD 1200V 75A 357W
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Technical Details
Physical
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C
Series IGBTMOD?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 39
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-XUFM-X39
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 357W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Three Phase Bridge Rectifier
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 75A
Power Dissipation-Max (Abs) 357W
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 75A
IGBT Type Trench
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 29nF @ 10V
VCEsat-Max 2.4 V
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