APTGF50DH60T1G
RoHS
/
Package SP1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 600V 65A 250W SP1
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Technical Details
Physical
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 12
Technical
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 9
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 12
JESD-30 Code R-XUFM-X9
Qualification Status Not Qualified
Number of Elements 2
Configuration Asymmetrical Bridge
Element Configuration Dual
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 65A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.1V
Input Capacitance 2.2nF
Turn On Time 52 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 50A
Turn Off Time-Nom (toff) 151 ns
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 2.2nF @ 25V
VCEsat-Max 2.45 V
Dimensions
Height 11.5mm
Length 51.6mm
Width 40.8mm
Compliance
RoHS Status RoHS Compliant
Alternative Model
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