Input Capacitance (Cies) @ Vce 3.15nF @ 25V
Gate-Emitter Voltage-Max 20V
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 310 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
Power Dissipation-Max (Abs) 176W
Current - Collector Cutoff (Max) 250μA
Max Collector Current 80A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Dual
Configuration Three Level Inverter
Terminal Form UNSPECIFIED
Subcategory Insulated Gate BIP Transistors
Additional Feature AVALANCHE ENERGY RATED, ULTRA LOW-ON RESISTANCE
Number of Terminations 16
Operating Temperature -40°C~175°C TJ