NTMFS4837NHT1G
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN, 5 Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 10.2A SO-8FL
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Buying Options
Total Price: USD $0.65
Unit Price: USD $0.6536
≥1 USD $0.6536
≥10 USD $0.53675
≥100 USD $0.51965
≥500 USD $0.5035
≥1000 USD $0.4864
Inventory: 27086
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-PDSO-F6
Number of Elements 1
Power Dissipation-Max 880mW Ta 48W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5.8W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3016pF @ 12V
Current - Continuous Drain (Id) @ 25°C 10.2A Ta 75A Tc
Gate Charge (Qg) (Max) @ Vgs 23.8nC @ 4.5V
Rise Time 19.6 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Fall Time (Typ) 4.7 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 225A
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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