Input Capacitance (Cies) @ Vce 5.15nF @ 25V
Gate-Emitter Voltage-Max 30V
Turn Off Time-Nom (toff) 450 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 100A
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 50μA
Max Collector Current 148A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Terminal Form UNSPECIFIED
Max Power Dissipation 500W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH RELIABILITY, UL RECOGNIZED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ