2SK4096LS
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL SILICON MOSFET
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Buying Options
Total Price: USD $0.48
Unit Price: USD $0.4788
≥1 USD $0.4788
≥10 USD $0.3933
≥100 USD $0.38095
≥500 USD $0.3686
≥1000 USD $0.35625
Inventory: 8528
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 397 mJ
DS Breakdown Voltage-Min 500V
Pulsed Drain Current-Max (IDM) 32A
Drain-source On Resistance-Max 0.85Ohm
Drain Current-Max (Abs) (ID) 8A
JEDEC-95 Code TO-220AB
Drain to Source Voltage (Vdss) 500V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Current - Continuous Drain (Id) @ 25°C 7.1A Tc
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 30V
Rds On (Max) @ Id, Vgs 850m Ω @ 4A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2W Ta 33W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-PSFM-T3
Pin Count 3
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Additional Feature HIGH RELIABILITY
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Alternative Model
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