MUBW100-06A8
RoHS 
RoHS compliant
RoHS compliantPackage E3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 600V 125A 410W E3
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Input Capacitance (Cies) @ Vce 4.3nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type NPT
Turn Off Time-Nom (toff) 180 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 100A
Turn On Time 36 ns
Input Capacitance 4.3nF
Reverse Voltage 1.6kV
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 1.4mA
Max Collector Current 125A
Collector Emitter Voltage (VCEO) 2.5V
Input Three Phase Bridge Rectifier
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Power - Max 410W
Case Connection ISOLATED
Configuration Three Phase Inverter with Brake
Number of Elements 7
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X20
Pin Count 24
Base Part Number MUBW
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 410W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW SWITCHING LOSS, LOW SATURATION VOLTAGE
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Number of Terminations 20
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2007
Operating Temperature -40°C~125°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case E3
Mounting Type Chassis Mount
Mount Chassis Mount
Supply Chain
Factory Lead Time 32 Weeks
Alternative Model
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