MIO600-65E11
RoHS
/
Package E11
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
MOD IGBT SGL SWITCH 6500V E11
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 150nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
IGBT Type NPT
Vce(on) (Max) @ Vge, Ic 4.2V @ 15V, 600A
Max Breakdown Voltage 6.5kV
Input Capacitance 150nF
Voltage - Collector Emitter Breakdown (Max) 6500V
Collector Emitter Breakdown Voltage 6.5kV
Current - Collector Cutoff (Max) 120mA
Max Collector Current 600A
Collector Emitter Voltage (VCEO) 4.2V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection ISOLATED
Configuration Single Switch
Number of Elements 3
JESD-30 Code R-XUFM-X9
Pin Count 9
Base Part Number MIO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Subcategory Insulated Gate BIP Transistors
Number of Terminations 9
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Published 2011
Packaging Bulk
Operating Temperature -40°C~125°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 11
Package / Case E11
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Supply Chain
Factory Lead Time 25 Weeks
Alternative Model
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