Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.95m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 987pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8.2A Ta
Gate Charge (Qg) (Max) @ Vgs 9.7nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 750mW Ta 23.6W Tc
Reach Compliance Code not_compliant
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
DS Breakdown Voltage-Min 30V
Drain Current-Max (Abs) (ID) 8.2A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 46A
Turn-Off Delay Time 14 ns