MIEB100W1200TEH
RoHS 
RoHS compliant
RoHS compliantPackage E3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 1200V 183A 630W E3
PDF
/
Inventory: 7218
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Input Capacitance (Cies) @ Vce 7.43nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
Turn Off Time-Nom (toff) 700 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 100A
Turn On Time 175 ns
Input Capacitance 7.43nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 300μA
Max Collector Current 183A
Collector Emitter Voltage (VCEO) 2.2V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 630W
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 6
JESD-30 Code R-XUFM-X35
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 630W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Number of Terminations 35
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2010
Packaging Bulk
Operating Temperature -40°C~125°C TJ
Physical
Transistor Element Material SILICON
Package / Case E3
Mounting Type Chassis Mount
Mount Chassis Mount
Alternative Model
Recommended For You
MIEB100W1200TEH+price,MIEB100W1200TEH+datasheet,MIEB100W1200TEH+in stock,buy+MIEB100W1200TEH,finder+MIEB100W1200TEH,MIEB100W1200TEH+tutorials,MIEB100W1200TEH+download