IXTH13N80
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 13A TO-247
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Pulsed Drain Current-Max (IDM) 52A
Drain to Source Breakdown Voltage 800V
Drain-source On Resistance-Max 0.8Ohm
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-247AD
Continuous Drain Current (ID) 13A
Turn-Off Delay Time 63 ns
Fall Time (Typ) 32 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 33ns
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 800m Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 300W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 300W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Series MegaMOS?
Published 1996
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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