FS50R07N2E4B11BOSA1
RoHS 
RoHS compliant
RoHS compliantPackage Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 650V 70A 190W
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Buying Options
Total Price: USD $58.17
Unit Price: USD $58.166943
≥1 USD $58.166943
≥10 USD $54.874474
≥100 USD $51.768374
≥500 USD $48.838087
≥1000 USD $46.073668
Inventory: 8219
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 3.1nF @ 25V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 265 ns
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 50A
Turn On Time 43 ns
Current - Collector (Ic) (Max) 70A
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector Cutoff (Max) 1mA
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 190W
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 6
JESD-30 Code R-XUFM-X25
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Additional Feature UL APPROVED
ECCN Code EAR99
Number of Terminations 25
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series EconoPACK? 2
Published 2012
Operating Temperature -40°C~150°C
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case Module
Mounting Type Chassis Mount
Supply Chain
Factory Lead Time 14 Weeks
Alternative Model
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