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FS150R12KT3BOSA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 1200V 200A CHASS MNT
PDF
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Buying Options
Total Price: USD $141.42
Unit Price: USD $141.416
≥1 USD $141.416
Inventory: 35
Minimum: 1
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+

Technical Details

Compliance

Lead Free Contains Lead
RoHS Status RoHS Compliant

Technical

Input Capacitance (Cies) @ Vce 10.5nF @ 25V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 610 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 150A
Turn On Time 340 ns
Current - Collector (Ic) (Max) 200A
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector Cutoff (Max) 5mA
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Power - Max 700W
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 6
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X35
Pin Count 35
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
ECCN Code EAR99
Number of Terminations 35
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Active
Pbfree Code no
Published 2002
Operating Temperature -40°C~125°C

Physical

Transistor Element Material SILICON
Surface Mount NO
Package / Case Module
Mounting Type Chassis Mount

Supply Chain

Factory Lead Time 16 Weeks

Alternative Model

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