Drain to Source Resistance 28mOhm
Drain to Source Breakdown Voltage 60V
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 50A
Turn-Off Delay Time 42 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 66nC @ 5V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 28mOhm @ 31A, 5V
Element Configuration Single
Power Dissipation-Max 3.7W Ta 150W Tc
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ