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FS100R07PE4BOSA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MOD 650V 100A 335W
PDF
/
Buying Options
Total Price: USD $294.09
Unit Price: USD $294.085661
≥1 USD $294.085661
≥200 USD $113.807424
≥500 USD $109.80833
≥1000 USD $107.832416
Inventory: 1132
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount PCB
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C
Published 2002
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 20
ECCN Code EAR99
Max Power Dissipation 335W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 20
JESD-30 Code R-XUFM-X20
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 100A
Current - Collector Cutoff (Max) 1mA
Current - Collector (Ic) (Max) 100A
Turn On Time 110 ns
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 100A
Turn Off Time-Nom (toff) 610 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 6.2nF @ 25V

Dimensions

Height 17mm
Length 130mm
Width 70.6mm

Compliance

RoHS Status RoHS Compliant
Lead Free Contains Lead

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