NTB25P06
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL POWER MOSFET
PDF
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Buying Options
Total Price: USD $0.51
Unit Price: USD $0.51205
≥1 USD $0.51205
≥10 USD $0.4199
≥100 USD $0.4066
≥500 USD $0.39425
≥1000 USD $0.38095
Inventory: 65007
Minimum: 1
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Technical Details
Technical
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 225
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 120W Tj
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 82m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1.68pF @ 25V
Current - Continuous Drain (Id) @ 25°C 27.5A Ta
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±15V
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 27.5A
Drain-source On Resistance-Max 0.082Ohm
Pulsed Drain Current-Max (IDM) 80A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 600 mJ
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Terminal Finish TIN LEAD
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Packaging Tube
Operating Temperature -55°C~175°C TJ
Compliance
RoHS Status Non-RoHS Compliant
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Alternative Model
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