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FS100R07N2E4B11BOSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE VCES 600V 100A
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

Input Capacitance (Cies) @ Vce 6.2nF @ 25V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 370 ns
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 100A
Turn On Time 100 ns
Current - Collector (Ic) (Max) 125A
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector Cutoff (Max) 1mA
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 20mW
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 6
JESD-30 Code R-XUFM-X25
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Additional Feature UL APPROVED
ECCN Code EAR99
Number of Terminations 25
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Active
Published 2002
Operating Temperature -40°C~150°C

Physical

Transistor Element Material SILICON
Surface Mount NO
Package / Case Module
Mounting Type Chassis Mount

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