Resistor - Emitter Base (R2) 47 k Ω
Continuous Collector Current -100mA
Resistor - Base (R1) 2.2 k Ω
Frequency - Transition 250MHz
Max Breakdown Voltage 50V
Collector Emitter Saturation Voltage -300mV
Transition Frequency 250MHz
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 300mV
Transistor Type PNP - Pre-Biased
Transistor Application SWITCHING
Element Configuration Single
Operating Supply Voltage 50V
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 200mW
Subcategory BIP General Purpose Small Signal
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)