FF800R12KE3NOSA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE VCES 1200V 800A
PDF
/
Buying Options
Total Price: USD $850.14
Unit Price: USD $850.139696
≥1 USD $850.139696
≥10 USD $822.185392
≥25 USD $816.470099
≥50 USD $810.794539
≥100 USD $794.118056
≥500 USD $737.342673
Inventory: 1175
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 36 Weeks
Physical
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 130
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~125°C
Published 2002
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 10
JESD-30 Code R-XUFM-X10
Number of Elements 2
Configuration Single
Element Configuration Dual
Power Dissipation 3.9kW
Case Connection ISOLATED
Power - Max 3900W
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 1.2kA
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 1200A
Collector Emitter Saturation Voltage 1.7V
Turn On Time 880 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 800A
Turn Off Time-Nom (toff) 1140 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 57nF @ 25V
Compliance
RoHS Status RoHS Compliant
Lead Free Contains Lead
Alternative Model
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